Salary & Location
Salary negotiable
(Regular monthly salary of NT$40,000 or above)
新竹市
Required
Language Requirements
English
聽/中等、說/中等、讀/中等、寫/中等
Work Experience
3年以上
Job Description
This GaN (Gallium Nitride) Device Engineer is responsible for the design, development, testing, and optimizes GaN-based power devices for applications like electric vehicles and renewable energy. The engineer will work closely with cross-functional teams to ensure the successful implementation of GaN technology in different products.
**Key Responsibilities:**
- Design GaN power devices including HEMTs (High Electron Mobility Transistors), diodes, and integrated circuits.
- Utilize simulation tools (e.g., TCAD, SPICE) to predict device performance and optimize designs.
- Perform electrical characterization of GaN power devices to evaluate performance metrics such as breakdown voltage, on-resistance, and switching speed.
- Analyze test data to identify performance trends and failure mechanisms.
- Implement reliability testing protocols to ensure long-term stability of power devices under various operating conditions.
- Collaborate with manufacturing teams to transition processes from R&D to production.
- Document and present findings, progress, and challenges to stakeholders and management.
Number of Openings
1~1人
Educational Requirements
大學(學院)以上
Field of Study Requirements
其他自然科學相關、電機電子工程相關、光電工程相關
Work Schedule
日班
Leave Policy
週休二日
Job Category
Electronics Engineers
Semiconductor Engineer
新竹市
半導體製造業
台亞半導體股份有限公司成立於1983年，穩健踏實的企業文化，至今累積了豐富的經驗與專業。30年來，秉持著以客為尊的信念，以半導體為核心事業，提供多元的產品並致力成為全球技術最先進的光電感測整合元件開發與製造商，為客戶量身打造解決方案。垂直整合供應鍊的優勢、客製化的服務及策略聯盟的能力與環境和健康管理感測平台的技術革新，推動一個更安全與舒適的生活型態，是台亞半導體在國內外市場成功的關鍵。
創新廠：新竹科學園區創新一路八號
力行廠：新竹科學園區力行五路一號
「響應參與【產學研工程人才實務能力卓越基地計畫】工程人才網路就業媒合平台」IDBET_104
